Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth contacts, enabling reliable ohmic contact down to low electron densities, with a maximum Hall mobility of approximately 22,000 cm2/Vs. Low-temperature transport measurements illustrate metal-insulator transitions, and density-dependent quantum oscillation sequences. Enhanced spin susceptibility and density-dependent effective mass are observed, attributed to interaction effects and valley polarization. These findings establish monolayer MoSe2 as a versatile platform for further exploring interaction-driven quantum states.
@article{arxiv.2502.10972,
title = {Density-dependent spin susceptibility and effective mass in monolayer MoSe2},
author = {Chang Liu and Tongtong Jia and Zheng Sun and Yu Gu and Fan Xu and Kenji Watanabe and Takashi Taniguchi and Jinfeng Jia and Shiyong Wang and Xiaoxue Liu and Tingxin Li},
journal= {arXiv preprint arXiv:2502.10972},
year = {2025}
}