Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISFETs), where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) with NiOx Schottky electrode, where the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by on-state gate field. Our MESFETs with single-, double-, and triple-layered MoS2 respectively demonstrate high mobilities of 6000, 3500, and 2800 cm2/Vs at a certain low threshold voltage of -1 ~ -2 V. The thickness-dependent mobility difference in MESFETs was theoretically explained with electron scattering reduction mechanisms.
@article{arxiv.1406.6779,
title = {Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate},
author = {Hee Sung Lee and Seung Su Baik and Sung-Wook Min and Pyo Jin Jeon and Jin Sung Kim and Kyujin Choi and Sunmin Ryu and Hyoung Joon Choi and Jae Hoon Kim and Seongil Im},
journal= {arXiv preprint arXiv:1406.6779},
year = {2014}
}