Monolayer molybdenum disulfide (MoS2) nanosheets, obtained via chemical vapor deposition onto SiO2/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS2 nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS2 electron affinity, enables a new field-effect transistor based on field emission.
@article{arxiv.2008.09910,
title = {Gate-controlled field emission current from MoS$_2$ nanosheets},
author = {Aniello Pelella and Alessandro Grillo and Francesca Urban and Filippo Giubileo and Maurizio Passacantando and Erik Pollmann and Stephan Sleziona and Marika Schleberger and Antonio Di Bartolomeo},
journal= {arXiv preprint arXiv:2008.09910},
year = {2020}
}