Large capacitance enhancement is useful for increasing the gate capacitance of field-effect transistors (FETs) to produce low-energy-consuming devices with improved gate controllability. We report strong capacitance enhancement effects in a newly emerged two-dimensional channel material, molybdenum disulfide (MoS2). The enhancement effects are due to strong electron-electron interaction at the low carrier density regime in MoS2. We achieve about 50% capacitance enhancement in monolayer devices and 10% capacitance enhancement in bilayer devices. However, the enhancement effect is not obvious in multilayer (layer number >3) devices. Using the Hartree-Fock approximation, we illustrate the same trend in our inverse compressibility data.
@article{arxiv.2002.01114,
title = {Negative compressibility in MoS2 capacitance},
author = {Ruiyan Gao and Zhehan Ying and Liheng An and Zefei Wu and Xiangbing Cai and Shi Wang and Ziqing Ye and Xuemeng Feng and Meizheng Huang and Ning Wang},
journal= {arXiv preprint arXiv:2002.01114},
year = {2020}
}