A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS2 channels exposed to atmospheric conditions, the existence of electron traps in MoS2 and at the interface between the gate insulator and the thin-film MoS2 are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model.
@article{arxiv.2407.07783,
title = {Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs},
author = {Eros Reato and Ardeshir Esteki and Benny Ku and Zhenxing Wang and Michael Heuken and Max C. Lemme and Olof Engström},
journal= {arXiv preprint arXiv:2407.07783},
year = {2025}
}