MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Yuchen Du; Lingming Yang; Jingyun Zhang; Han Liu; Kausik Majumdar; Paul D. Kirsch; Peide D. Ye

doi:10.1109/LED.2014.2313340

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Materials Science 2014-05-13 v2 Mesoscale and Nanoscale Physics

Authors: Yuchen Du , Lingming Yang , Jingyun Zhang , Han Liu , Kausik Majumdar , Paul D. Kirsch , Peide D. Ye

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Abstract

For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 {\mu}m gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS2 FETs without graphene contact layer. Temperature dependent study on MoS2/graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure.

Keywords

MoS2 field-effect transistors graphene heterocontacts contact resistance Schottky barrier transfer length method

Cite

@article{arxiv.1403.5485,
  title  = {MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts},
  author = {Yuchen Du and Lingming Yang and Jingyun Zhang and Han Liu and Kausik Majumdar and Paul D. Kirsch and Peide D. Ye},
  journal= {arXiv preprint arXiv:1403.5485},
  year   = {2014}
}

MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts

Abstract

Keywords

Cite

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