Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 kΩμm and high on/off current ratios of 108. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.
@article{arxiv.2304.01177,
title = {CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors},
author = {Daniel S. Schneider and Leonardo Lucchesi and Eros Reato and Zhenyu Wang and Agata Piacentini and Jens Bolten and Damiano Marian and Enrique G. Marin and Aleksandra Radenovic and Zhenxing Wang and Gianluca Fiori and Andras Kis and Giuseppe Iannaccone and Daniel Neumaier and Max C. Lemme},
journal= {arXiv preprint arXiv:2304.01177},
year = {2024}
}