We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance of chemically synthesized (s-) MoS2 are indistinguishable from that of mechanically exfoliated (x-) MoS2, however flat-band voltages are different, possibly due to polar chemical residues originating in the transfer process. Electron diffraction studies and Raman spectroscopy show the structural similarity of s-MoS2 to x-MoS2. This initial report on the behavior and properties of s-MoS2 illustrates the feasibility of electronic devices using synthetic layered 2D crystal semiconductors.
@article{arxiv.1301.4527,
title = {Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors},
author = {Wan Sik Hwang and Maja Remskar and Rusen Yan and Tom Kosel and Jong Kyung Park and Byung Jin Cho and Wilfried Haensch and Huili and Xing and Alan Seabaugh and Debdeep Jena},
journal= {arXiv preprint arXiv:1301.4527},
year = {2015}
}