Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

V. Podzorov; M. E. Gershenson; Ch. Kloc; R. Zeis; E. Bucher

doi:10.1063/1.1723695

Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

Materials Science 2009-11-10 v1 Strongly Correlated Electrons

Authors: V. Podzorov , M. E. Gershenson , Ch. Kloc , R. Zeis , E. Bucher

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Abstract

We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.

Keywords

field-effect transistors transition metal dichalcogenides high mobility ambipolar operation flexible electronics

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@article{arxiv.cond-mat/0401243,
  title  = {Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides},
  author = {V. Podzorov and M. E. Gershenson and Ch. Kloc and R. Zeis and E. Bucher},
  journal= {arXiv preprint arXiv:cond-mat/0401243},
  year   = {2009}
}

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Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides

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