In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for developing scalable spin qubit quantum processors.
@article{arxiv.2402.15499,
title = {Simulated Charge Stability in a MOSFET Linear Quantum Dot Array},
author = {Zach D. Merino and Bohdan Khromets and Jonathan Baugh},
journal= {arXiv preprint arXiv:2402.15499},
year = {2024}
}
Comments
10 pages, 4 figures. Submitted in proceedings of the VI Applied Mathematics, Modeling, and Computer Simulation (AMMCS) International Conference, Waterloo, Ontario, Canada