A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.
@article{arxiv.1201.3760,
title = {A tunable, dual mode field-effect or single electron transistor},
author = {Benoît Roche and Benoit Voisin and Xavier Jehl and Romain Wacquez and Marc Sanquer and Maud Vinet and Veeresh Deshpande and Bernard Previtali},
journal= {arXiv preprint arXiv:1201.3760},
year = {2012}
}