Experimental realization of a silicon spin field-effect transistor
Materials Science
2009-11-13 v1 Other Condensed Matter
Abstract
A longitudinal electric field is used to control the transit time (through an undoped silicon vertical channel) of spin-polarized electrons precessing in a perpendicular magnetic field. Since an applied voltage determines the final spin direction at the spin detector and hence the output collector current, this comprises a spin field-effect transistor. An improved hot-electron spin injector providing ~115% magnetocurrent, corresponding to at least ~38% electron current spin polarization after transport through 10 microns undoped single-crystal silicon, is used for maximum current modulation.
Keywords
Cite
@article{arxiv.0705.4260,
title = {Experimental realization of a silicon spin field-effect transistor},
author = {Biqin Huang and Douwe J. Monsma and Ian Appelbaum},
journal= {arXiv preprint arXiv:0705.4260},
year = {2009}
}