Spin-Flip Transistor
Mesoscale and Nanoscale Physics
2009-11-07 v1
Abstract
The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals. The electric current between source and drain can be controlled by the magnetization of a ``base'' reservoir up to distances of the order of the spin-flip diffusion length.
Keywords
Cite
@article{arxiv.cond-mat/0101025,
title = {Spin-Flip Transistor},
author = {Gerrit E. W. Bauer and Yuli V. Nazarov and Arne Brataas},
journal= {arXiv preprint arXiv:cond-mat/0101025},
year = {2009}
}
Comments
Proceedings of NATO-ARW on Semiconductor Nanostructures, 5-9 February 2001, Queenstown, NZ, to be published in Physica E