Theory of magnetic bipolar transistors
Condensed Matter
2007-05-23 v1
Abstract
The concept of a magnetic bipolar transistor (MBT) is introduced. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin.
Cite
@article{arxiv.cond-mat/0211639,
title = {Theory of magnetic bipolar transistors},
author = {Jaroslav Fabian and Igor Zutic and S. Das Sarma},
journal= {arXiv preprint arXiv:cond-mat/0211639},
year = {2007}
}
Comments
5 pages, 3 figures