Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor
Mesoscale and Nanoscale Physics
2007-09-28 v2
Abstract
We examine transport through a quantum dot coupled to three ferromagnetic leads in the regime of weak tunnel coupling. A finite source-drain voltage generates a nonequilibrium spin on the otherwise non-magnetic quantum dot. This spin accumulation leads to magnetoresistance. A ferromagnetic but current-free base electrode influences the quantum-dot spin via incoherent spin-flip processes and coherent spin precession. As the dot spin determines the conductance of the device, this allows for a purely magnetic transistor-like operation. We analyze the effect of both types of processes on the electric current in different geometries.
Cite
@article{arxiv.0705.0648,
title = {Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor},
author = {Daniel Urban and Matthias Braun and Jürgen König},
journal= {arXiv preprint arXiv:0705.0648},
year = {2007}
}