English

Shuttling of Spin Polarized Electrons in Molecular Transistors

Mesoscale and Nanoscale Physics 2015-07-22 v1

Abstract

Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanishes as the spin polarization approaches 100%. The feasibility of detecting magnetic shuttling in a C60C_{60}-based molecular transistor with magnetic (Ni) electrodes is discussed [A.~N.~Pasupathy et al., Science 306, 86 (2004)].

Keywords

Cite

@article{arxiv.1507.05813,
  title  = {Shuttling of Spin Polarized Electrons in Molecular Transistors},
  author = {O. A. Ilinskaya and S. I. Kulinich and I. V. Krive and R. I. Shekhter and Y. W. Park and M. Jonson},
  journal= {arXiv preprint arXiv:1507.05813},
  year   = {2015}
}

Comments

Submitted to a special issue of "Synthetic Metals" to appear in March 2016