Shuttling of Spin Polarized Electrons in Molecular Transistors
Mesoscale and Nanoscale Physics
2015-07-22 v1
Abstract
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a finite interval of external magnetic field strengths. The lower critical magnetic field is determined by the degree of spin polarization and it vanishes as the spin polarization approaches 100%. The feasibility of detecting magnetic shuttling in a -based molecular transistor with magnetic (Ni) electrodes is discussed [A.~N.~Pasupathy et al., Science 306, 86 (2004)].
Keywords
Cite
@article{arxiv.1507.05813,
title = {Shuttling of Spin Polarized Electrons in Molecular Transistors},
author = {O. A. Ilinskaya and S. I. Kulinich and I. V. Krive and R. I. Shekhter and Y. W. Park and M. Jonson},
journal= {arXiv preprint arXiv:1507.05813},
year = {2015}
}
Comments
Submitted to a special issue of "Synthetic Metals" to appear in March 2016