Bipolar Charge Plasma Transistor: A Novel Three Terminal Device
Abstract
A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge plasma layers on undoped SOI to form the emitter, base and collector regions of a lateral NPN transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain compared to a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets which are serious issues in ultra thin SOI structures.
Cite
@article{arxiv.1203.5670,
title = {Bipolar Charge Plasma Transistor: A Novel Three Terminal Device},
author = {M. Jagadesh Kumar and Kanika Nadda},
journal= {arXiv preprint arXiv:1203.5670},
year = {2012}
}