Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance
Mesoscale and Nanoscale Physics
2013-08-21 v1
Abstract
In this paper, we report an alternative approach of implementing a Schottky collector bipolar transistor without doping the ultrathin SOI film. Using different metal work function electrodes, the electrons and holes are induced in an intrinsic silicon film to create the n emitter and the p base regions, respectively. Using two-dimensional device simulation, the performance of the proposed device has been evaluated. Our results demonstrate that the charge plasma based bipolar transistor with Schottky collector exhibits a high current gain and a better cut-off frequency compared to its conventional counterpart.
Keywords
Cite
@article{arxiv.1308.4286,
title = {Schottky Collector Bipolar Transistor without Impurity Doped Emitter and Base: Design and Performance},
author = {Kanika Nadda and M. Jagadesh Kumar},
journal= {arXiv preprint arXiv:1308.4286},
year = {2013}
}