Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/∘C in the temperature interval from 25 to 50∘C.
@article{arxiv.1503.05700,
title = {Pt silicide/poly-Si Schottky diodes as temperature sensors for bolometers},
author = {V. A. Yuryev and K. V. Chizh and V. A. Chapnin and S. A. Mironov and V. P. Dubkov and O. V. Uvarov and V. P. Kalinushkin and V. M. Senkov and O. Y. Nalivaiko and A. G. Novikau and P. I. Gaiduk},
journal= {arXiv preprint arXiv:1503.05700},
year = {2015}
}
Comments
10 pages, 11 figures, 2 tables; version accepted for publication in J. Appl. Phys