Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width
Materials Science
2011-10-26 v1
Abstract
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent non-equilibrium Green's function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviation.
Keywords
Cite
@article{arxiv.1110.5437,
title = {Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width},
author = {Nicolas Reckinger and Xiaohui Tang and Emmanuel Dubois and Guilhem Larrieu and Denis Flandre and Jean-Pierre Raskin and Aryan Afzalian},
journal= {arXiv preprint arXiv:1110.5437},
year = {2011}
}