A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length lc (associated with the semiconductor doping level) the conventional description no longer holds. For such small diodes the Schottky barrier thickness decreases with decreasing diode size. As a consequence, the resistance of the diode is strongly reduced, due to enhanced tunneling. Without the necessity of assuming a reduced (non-bulk) Schottky barrier height, this effect provides an explanation for several experimental observations of enhanced conduction in small Schottky diodes.
@article{arxiv.cond-mat/0202401,
title = {Scaling of nano-Schottky-diodes},
author = {G. D. J. Smit and S. Rogge and T. M. Klapwijk},
journal= {arXiv preprint arXiv:cond-mat/0202401},
year = {2009}
}
Comments
4 pages, 4 figures, accepted for publication in Appl. Phys. Lett., some minor additions and corrections