New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures
Mesoscale and Nanoscale Physics
2009-05-14 v1 Strongly Correlated Electrons
Abstract
Electronic processes in a semiconductor system consisting of some Resonant Tunnelling Structures, built in the depletion region of a Schottky barrier, are investigated. It is shown that the Schottky barrier can block or unblock the resonant tunnelling current effectively. Tunnelling processes do reveal the coherent character. Sharp nonlinear current-voltage characteristics are observed on both of the forward and the reverse branches.
Cite
@article{arxiv.0905.2142,
title = {New Possibilities for Obtaining a Steep Nonlinear Current-Voltage Characteristics in some Semiconductor Structures},
author = {D. I. Sheka and O. V. Tretyak and A. M. Korol and A. K. Sen and A. Mookerjee},
journal= {arXiv preprint arXiv:0905.2142},
year = {2009}
}
Comments
LaTeX, 12 pages, 7 figures