Related papers: New Possibilities for Obtaining a Steep Nonlinear …
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical…
We develop a new theoretical approach for modelling a wide range of semiconductor-superconductor structures with arbitrary potential barriers and a spatially-dependent superconducting order parameter. We demonstrate asymmetry in the…
An attempt to determine theoretically the highly non-linear current-voltage (I-V) characteristics of polycrystalline semiconductors, such as ZnO-based varistors, is made from the electrical properties of individual grain boundaries under dc…
We present a self-consistent calculation, based on the global coherent tunnelling model, and show that structural asymmetry of double barrier resonant tunnelling structures significantly modifies the current-voltage characteristics compared…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
We investigate electronic properties of heterojunctions between metallic and semiconducting single-wall carbon nanotubes. Ineffective screening of the long range Coulomb interaction in one-dimensional nanotube systems drastically modifies…
A new method based on modified optical Bloch equations is proposed for studying resonant tunneling in semiconductor heterostructures. The method manifestly takes account of electrons' statistics, which enables to investigate the influence…
We develop the concept of scattering matrix and we use it to perform stable numerical calculations of resonant tunneling of electrons through a multiple potential barrier in a semiconductor heterostructure. Electrons move in two external…
The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate…
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with…
Circuits provide ideal platforms of topological phases and matter, yet the study of topological circuits in the strongly nonlinear regime, has been lacking. We propose and experimentally demonstrate strongly nonlinear topological phases and…
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…
We introduce a solvable model of a nonlinear double-barrier structure, described by a generalized effective-mass equation with a nonlinear coupling term. This model is interesting in its own right for possible new applications, as well as…
We investigate the phenomenon of reflectionless tunneling in ballistic normal-metal--superconductor (NS) structures, using a semiclassical formalism. It is shown that applied magnetic field and superconducting phase difference both impair…
We show that there is a regime of strong feedback for a nanomechanical oscillatory mode weakly coupled to a single-electron tunneling device. In this regime, the current is strongly modified whereas the current noise is parametrically big…
The fully nonlinear response of a many-level tunneling system to a strong alternating field of high frequency $\omega$ is studied in terms of the Schwinger-Keldysh nonequilibrium Green functions. The nonlinear time dependent tunneling…
The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is…
The persistent current for a one-dimensional ring with two tunnel barriers is considered in the limit of weakly interacting electrons. In addition to a small off-resonance current, there are two kinds of resonant behavior; (i) a current…
We theoretically investigate resonant tunneling through a linear array of quantum dots with subsequent tunnel coupling. We consider two limiting cases: (i) strong Coulomb blockade, where only one extra electron can be present in the array…