Related papers: New Possibilities for Obtaining a Steep Nonlinear …
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
We have revealed that the barrier-tunneling process in non-integrable systems is strongly linked to chaos in complex phase space by investigating a simple scattering map model. The semiclassical wavefunction reproduces complicated features…
We outline a generic ratchet mechanism for creating directed spin-polarized currents in ac-driven double well or double dot structures by employing resonant spin transfer through the system engineered by local external magnetic fields. We…
To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel…
We analyze the dynamical evolution of the current and the charge density in a superlattice for fixed external dc voltage in the regime of self-sustained current oscillations, using a microscopic sequential tunneling model. Fronts of…
We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is…
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate…
We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…
The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor.…
A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent…
We show that an instability may be present in resonant tunneling through a quantum well in one, two and three dimensions, when the resonance lies near the emitter Fermi level. A simple semiclassical model which simulates the resonance and…
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…
We investigate the stochastic resonance phenomenon in a physical system based on a tunnel diode. The experimental control parameters are set to allow the control of the frequency and amplitude of the deterministic modulating signal over an…
We derive a prediction of dynamical tunneling rates from regular to chaotic phase-space regions combining the direct regular-to-chaotic tunneling mechanism in the quantum regime with an improved resonance-assisted tunneling theory in the…
We present a theory for the nonlinear current-voltage characteristics of a ballistic quantum constriction. Nonlinear features first develop because of above-barrier reflection from the potential profile, created by impurities in the…
We analyze the dynamical evolution of the resonant tunneling of an ensemble of electrons through a double barrier in the presence of the self-consistent potential created by the charge accumulation in the well. The intrinsic nonlinearity of…
A current due to a tunneling event that involves three times the charge of an electron was observed in the current - voltage characteristics of a superconducting single-electron tunneling transistor. In this tunnel event, a Cooper pair…
A dynamic systems model is proposed describing memory resistors which include a filament conductive bridge. In this model the system state is defined by both a dynamic tunneling barrier (associated with the filament-electrode gap) and a…
We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(111) and CoSi$_2$(111)/Si(111), we consider various possible…