We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.
@article{arxiv.cond-mat/0305124,
title = {Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode},
author = {A. Slobodskyy and C. Gould and T. Slobodskyy and C. R. Becker and G. Schmidt and L. W. Molenkamp},
journal= {arXiv preprint arXiv:cond-mat/0305124},
year = {2009}
}