We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin polarized electrons injected into bulk InAs make spin resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.
@article{arxiv.cond-mat/0211300,
title = {Electron Spin Polarization in Resonant Interband Tunneling Devices},
author = {A. G. Petukhov and D. O. Demchenko and A. N. Chantis},
journal= {arXiv preprint arXiv:cond-mat/0211300},
year = {2009}
}