Spin-dependent resonant tunneling in symmetrical double-barrier structure
Mesoscale and Nanoscale Physics
2009-11-10 v1 Materials Science
Abstract
A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave vector of electrons leads to (i) spin polarization of the transmitted carriers in an in-plane electric field, (ii) generation of an in-plane electric current under tunneling of spin-polarized carriers. These effects originated from spin-orbit coupling-induced splitting of the resonant level have been considered for double-barrier tunneling structures.
Keywords
Cite
@article{arxiv.cond-mat/0410198,
title = {Spin-dependent resonant tunneling in symmetrical double-barrier structure},
author = {M. M. Glazov and P. S. Alekseev and M. A. Odnoblyudov and V. M. Chistyakov and S. A. Tarasenko and I. N. Yassievich},
journal= {arXiv preprint arXiv:cond-mat/0410198},
year = {2009}
}
Comments
5 pages, 4 figures