Tunneling spin-galvanic effect
Mesoscale and Nanoscale Physics
2009-11-10 v1 Materials Science
Abstract
It has been shown that tunneling of spin-polarized electrons through a semiconductor barrier is accompanied by generation of an electric current in the plane of the interfaces. The direction of this interface current is determined by the spin orientation of the electrons, in particular the current changes its direction if the spin orientation changes the sign. Microscopic origin of such a 'tunneling spin-galvanic' effect is the spin-orbit coupling-induced dependence of the barrier transparency on the spin orientation and the wavevector of electrons.
Keywords
Cite
@article{arxiv.cond-mat/0310111,
title = {Tunneling spin-galvanic effect},
author = {S. A. Tarasenko and V. I. Perel' and I. N. Yassievich},
journal= {arXiv preprint arXiv:cond-mat/0310111},
year = {2009}
}
Comments
3 pages, 2 figures