This is an overview of current-induced spin polarization in gyrotropic semiconductor nanostructures. Such a spin polarization as response to a charge current may be classified as the inverse of the spin-galvanic effect, and sometimes is called as magneto-electrical effect or Edelstein (Rashba-Edelstein) effect. Apart from reviewing the experimental status of affairs, we have provided a detailed theoretical description of both effects in terms of a phenomenological model of spin-dependent relaxation processes, and an alternative theoretical approach based on the quasi-classical Boltzmann equation.
@article{arxiv.1606.02043,
title = {Spin polarisation by current},
author = {Sergey D. Ganichev and Maxim Trushin and John Schliemann},
journal= {arXiv preprint arXiv:1606.02043},
year = {2019}
}