The Edelstein effect occurring in systems with broken inversion symmetry generates a spin polarization when an electric field is applied, which is most advantageous in spintronics applications. Unfortunately, it became apparent that this kind of magnetoelectric effect is very small in semiconductors. We here demonstrate that correlation effects can strongly enhance the magnetoelectric effect. Particularly, we observe a strong enhancement of the Edelstein effect in f-electron systems close to the coherence temperature, where the f-electrons change their character from localized to itinerant. We furthermore show that this enhancement can be explained by a coupling between the conduction electrons and the still localized f-electrons.
@article{arxiv.1803.05092,
title = {Strong enhancement of the Edelstein effect in f-electron systems},
author = {Robert Peters and Youichi Yanase},
journal= {arXiv preprint arXiv:1803.05092},
year = {2018}
}