Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect
Mesoscale and Nanoscale Physics
2009-11-11 v2
Abstract
Spin-dependent tunneling through a symmetric semiconductor barrier is studied including the k^3 Dresselhaus effect. The spin-dependent transmission of electron can be obtained analytically. By comparing with previous work(Phys. Rev. B 67. R201304 (2003) and Phys. Rev. Lett. 93. 056601 (2004)), it is shown that the spin polarization and interface current are changed significantly by including the off-diagonal elements in the current operator, and can be enhanced considerably by the Dresselhaus effect in the contact regions.
Keywords
Cite
@article{arxiv.cond-mat/0509641,
title = {Spin-dependent tunneling through a symmetric semiconductor barrier: the Dresselhaus effect},
author = {L. G. Wang and Wen Yang and Kai Chang},
journal= {arXiv preprint arXiv:cond-mat/0509641},
year = {2009}
}
Comments
10 pages, 5 figures, to appear in PRB