Spin-dependent tunnelling through a symmetric barrier
Mesoscale and Nanoscale Physics
2009-11-10 v2 Disordered Systems and Neural Networks
Abstract
The problem of electron tunnelling through a symmetric semiconductor barrier based on zinc-blende-structure material is studied. The Dresselhaus terms in the effective Hamiltonian of bulk semiconductor of the barrier are shown to result in a dependence of the tunnelling transmission on the spin orientation. The difference of the transmission probabilities for opposite spin orientations can achieve several percents for the reasonable width of the barriers.
Keywords
Cite
@article{arxiv.cond-mat/0301098,
title = {Spin-dependent tunnelling through a symmetric barrier},
author = {V. I. Perel' and S. A. Tarasenko and I. N. Yassievich and S. D. Ganichev and V. V. Bel'kov and W. Prettl},
journal= {arXiv preprint arXiv:cond-mat/0301098},
year = {2009}
}
Comments
3 pages, Submitted to Phys. Rev. B