Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers
Mesoscale and Nanoscale Physics
2022-11-01 v1 Materials Science
Abstract
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic curve confirmed the observed magnetoresistance is due to spin-dependent tunneling effect. Temperature dependent study indicated that the total conductance of the junction is dominated by direct tunneling, with only a small portion from the hopping conduction through the defect states inside the barrier.
Keywords
Cite
@article{arxiv.2210.16727,
title = {Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers},
author = {W. G. Wang and C. Ni and A. Ozbay and L. R. Shah and X. Fan and X. M. Kou and E. R. Nowak and J. Q. Xiao},
journal= {arXiv preprint arXiv:2210.16727},
year = {2022}
}