Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure
Mesoscale and Nanoscale Physics
2008-10-06 v1
Abstract
In this contribution, we calculate the spin-dependent ballistic and coherent transport through epitaxial Fe/ZnSe (001) simple and double magnetic tunnel junctions with two different interface terminations: Zn-terminated and Se-terminated. The electronic structure of the junctions is modeled by a second-nearest neighbors {\it spd} tight-binding Hamiltonian parametrized to {\it ab initio} calculated band structures, while the conductances and the tunneling magnetoresistance are calculated within Landauer's formalism. The calculations are done at zero bias voltage and as a function of energy. We show and discuss the influence of the interface structure on the spin-dependent transport through simple and double tunnel junctions.
Keywords
Cite
@article{arxiv.0810.0531,
title = {Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure},
author = {J. Peralta-Ramos and A. M. Llois},
journal= {arXiv preprint arXiv:0810.0531},
year = {2008}
}
Comments
2006