We calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility of a Schottky barrier. From our results of interface resistance we estimate the barrier thickness needed for efficient spin injection if the process is non-ballistic.
Cite
@article{arxiv.cond-mat/0207492,
title = {Spin Injection: Interface Resistance in Fe/Semiconductor Junctions Calculated from First Principles},
author = {Olaf Wunnicke and Phivos Mavropoulos and Peter H. Dederichs},
journal= {arXiv preprint arXiv:cond-mat/0207492},
year = {2007}
}
Comments
2 figures; submitted to Journal of Superconductivity: Incorporating Novel Magnetism