The efficient spin injector scheme based on Heusler materials
Materials Science
2013-08-08 v1
Abstract
We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principal calculations verify that interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediate between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.
Keywords
Cite
@article{arxiv.1103.5928,
title = {The efficient spin injector scheme based on Heusler materials},
author = {Stanislav Chadov and Tanja Graf and Kristina Chadova and Xuefang Dai and Frederick Casper and Gerhard H. Fecher and Claudia Felser},
journal= {arXiv preprint arXiv:1103.5928},
year = {2013}
}