The role of the tunneling mechanisms in metal-disordered layer-semiconductor structure under spin injection at the interface is investigated. The non-ideal metal-semiconductor structure as prepared by ionized cluster beam deposition is considered, and it is shown that the depletion region of the semiconductor can be tailored to include a suitably heavily doped region near the interface. The tunneling is described within a simplified model in which the expression for the interface resistance of the metal-disordered layer-semiconductor structure is obtained. It is argued that in the case of ionized cluster beam deposited non-ideal Schottky structure a significant spin injection is achieved.
@article{arxiv.cond-mat/0305501,
title = {On possible spin injection at non-ideal Schottky contacts},
author = {D. Korosak and B. Cvikl},
journal= {arXiv preprint arXiv:cond-mat/0305501},
year = {2007}
}