Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers
Abstract
We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or DMS). By using appropriate physical boundary conditions, we find expressions for the resistances of these structures which are in general different from previous results in the literature. When the magnetoresistance of the contacts is negligible, we find that the spin-accumulation effect alone cannot account for the dependence observed in recent magnetoresistance data. In a limited parameter range, our formulas predict a strong dependence arising from the magnetic contacts in systems where their magnetoresistances are sizable.
Keywords
Cite
@article{arxiv.cond-mat/0312705,
title = {Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers},
author = {Alexander Khaetskii and J. Carlos Egues and Daniel Loss and Charles Gould and Georg Schmidt and Laurens W. Molenkamp},
journal= {arXiv preprint arXiv:cond-mat/0312705},
year = {2009}
}
Comments
6 pages, 3 eps figs. (extended version- new title + two new figures added)