Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration
Abstract
Recently, the EuS/InAs interface has attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory (DFT) with a machine-learned Hubbard correction [npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interface on the electronic structure. For all interface configurations considered here, we find that the EuS valence band maximum (VBM) lies below the InAs VBM. In addition, dispersed states emerge at the top of the InAs VBM at the interface, which do not exist in either material separately. These states are contributed mainly by the InAs layer adjacent to the interface. They are localized at the interface and may be attributed to charge transfer from the EuS to the InAs. The interface configuration affects the position of the EuS VBM with respect to the InAs VBM, as well as the dispersion of the interface state. For all interface configurations studied here, the induced magnetic moment in the InAs is small. This suggests that this interface, in its coherent form studied here, is not promising for inducing equilibrium magnetic properties in InAs.
Keywords
Cite
@article{arxiv.2104.01623,
title = {Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration},
author = {Maituo Yu and Saeed Moayedpour and Shuyang Yang and Derek Dardzinski and Chunzhi Wu and Vlad S. Pribiag and Noa Marom},
journal= {arXiv preprint arXiv:2104.01623},
year = {2021}
}