Electron space charge effect on spin injection into semiconductors
Mesoscale and Nanoscale Physics
2010-06-22 v2
Abstract
We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration.
Keywords
Cite
@article{arxiv.cond-mat/0212133,
title = {Electron space charge effect on spin injection into semiconductors},
author = {Yue Yu and Jinbin Li and S. T. Chui},
journal= {arXiv preprint arXiv:cond-mat/0212133},
year = {2010}
}
Comments
4 pages, 3 figures, accepted for publication by Phys. Rev. B