Spin injection and accumulation in inhomogeneous semiconductors
Materials Science
2007-05-23 v1 Mesoscale and Nanoscale Physics
Abstract
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space-charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement.
Keywords
Cite
@article{arxiv.cond-mat/0507427,
title = {Spin injection and accumulation in inhomogeneous semiconductors},
author = {Dan Csontos and Sergio E. Ulloa},
journal= {arXiv preprint arXiv:cond-mat/0507427},
year = {2007}
}
Comments
4 pages