A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.
@article{arxiv.cond-mat/0108510,
title = {Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor},
author = {G. Schmidt and G. Richter and P. Grabs and C. Gould and D. Ferrand and L. W. Molenkamp},
journal= {arXiv preprint arXiv:cond-mat/0108510},
year = {2009}
}