A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%.
@article{arxiv.cond-mat/0107571,
title = {Large magnetoresistance using hybrid spin filter devices},
author = {P. LeClair and J. K. Ha and H. J. M. Swagten and C. H. van de Vin and J. T. Kohlhepp and W. J. M. de Jonge},
journal= {arXiv preprint arXiv:cond-mat/0107571},
year = {2009}
}
Comments
3.5 pages, 3 figures, submitted to Appl. Phys. Lett