Crossed Andreev reflection-induced magnetoresistance
Mesoscale and Nanoscale Physics
2007-05-23 v2 Superconductivity
Abstract
We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin-valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures.
Cite
@article{arxiv.cond-mat/0512090,
title = {Crossed Andreev reflection-induced magnetoresistance},
author = {F. Giazotto and F. Taddei and R. Fazio and F. Beltram},
journal= {arXiv preprint arXiv:cond-mat/0512090},
year = {2007}
}
Comments
5 pages, 4 figures, final published version