Spin transference and magnetoresistance amplification in a transistor
Mesoscale and Nanoscale Physics
2008-02-20 v2 Materials Science
Abstract
A current problem in semiconductor spin-based electronics is the difficulty of experimentally expressing the effect of spin-polarized current in electrical circuit measurements. We present a theoretical solution with the principle of transference of the spin diffusion effects in the semiconductor channel of a system with three magnetic terminals. A notable result of technological consequences is the room temperature amplification of the magneto-resistive effect, integrable with electronics circuits, demonstrated by computation of current dependence on magnetization configuration in such a system with currently achievable parameters.
Keywords
Cite
@article{arxiv.cond-mat/0507378,
title = {Spin transference and magnetoresistance amplification in a transistor},
author = {Hanan Dery and Lukasz Cywinski and Lu J. Sham},
journal= {arXiv preprint arXiv:cond-mat/0507378},
year = {2008}
}
Comments
4 pages, 3 figures, revised version, changed title, new figures