Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions
Mesoscale and Nanoscale Physics
2014-12-08 v2 Other Condensed Matter
Abstract
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.
Keywords
Cite
@article{arxiv.1408.1003,
title = {Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions},
author = {Ian Appelbaum and Holly N. Tinkey and Pengke Li},
journal= {arXiv preprint arXiv:1408.1003},
year = {2014}
}