The spin-torque transistor
Mesoscale and Nanoscale Physics
2009-11-10 v1
Abstract
A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.
Keywords
Cite
@article{arxiv.cond-mat/0304550,
title = {The spin-torque transistor},
author = {Gerrit E. W. Bauer and Arne Brataas and Yaroslav Tserkovnyak and Bart J. van Wees},
journal= {arXiv preprint arXiv:cond-mat/0304550},
year = {2009}
}
Comments
to be published in Applied Physics Letters