Current-controlled magnetization dynamics in the spin-flip transistor
Abstract
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane, with source-drain magnetizations chosen fixed and antiparallel, whereas the third contact magnetization is allowed to move in a weak anisotropy field that guarantees thermal stability of the equilibrium structure at room temperature. We analyze the magnetization dynamics of the free layer under a dc source-drain bias current within the macrospin model and magneto-electronic circuit theory. A new tunable two-state behavior of the magnetization is found and the advantages of this phenomenon and potential applications are discussed.
Cite
@article{arxiv.cond-mat/0601632,
title = {Current-controlled magnetization dynamics in the spin-flip transistor},
author = {Xuhui Wang and Gerrit E. W. Bauer and Teruo Ono},
journal= {arXiv preprint arXiv:cond-mat/0601632},
year = {2009}
}
Comments
Accepted by JJAP special issue on Magnetization Dynamics in Spintronic Structures and Devices