English

Unipolar spin diodes and transistors

Materials Science 2009-10-31 v1

Abstract

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.

Keywords

Cite

@article{arxiv.cond-mat/0012484,
  title  = {Unipolar spin diodes and transistors},
  author = {M. E. Flatte and G. Vignale},
  journal= {arXiv preprint arXiv:cond-mat/0012484},
  year   = {2009}
}

Comments

Applied Physics Letters in press, 9 pages, 2 figures

R2 v1 2026-07-22T10:14:41.386Z