Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures
Other Condensed Matter
2015-06-25 v1
Abstract
The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials.
Keywords
Cite
@article{arxiv.cond-mat/0610275,
title = {Spin-polarized transport in ferromagnetic multilayered semiconductor nanostructures},
author = {E. J. R. Oliveira and A. T. da Cunha Lima and M. A. Boselli and G. M. Sipahi and S. C. P. Rodrigues and I. C. da Cunha Lima},
journal= {arXiv preprint arXiv:cond-mat/0610275},
year = {2015}
}
Comments
3 pages, 4 figures